OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket
In this paper, an In<sub>0.53</sub>Ga<sub>0.47</sub>As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N<sup>+</sup>-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Un...
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MDPI AG
2022-10-01
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| Online Access: | https://www.mdpi.com/1996-1944/15/19/6924 |
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| author | Hu Liu Wenting Zhang Zaixing Wang Yao Li Huawei Zhang |
| author_facet | Hu Liu Wenting Zhang Zaixing Wang Yao Li Huawei Zhang |
| author_sort | Hu Liu |
| collection | DOAJ |
| description | In this paper, an In<sub>0.53</sub>Ga<sub>0.47</sub>As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N<sup>+</sup>-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed DGNP-EHBTFET can improve device performance without sacrificing the chip density, and can simplify the manufacturing process. The introduction of the dual-metal left-gate and the N<sup>+</sup>-pocket can shift the point-tunneling junction and adjust the energy band and the electric field in it, aiming to substantially degrade the OFF-state current (<i>I</i><sub>OFF</sub>) and maintain good ON-state performance. Moreover, the line tunneling governed by the tunneling-gate and the right-gate can further regulate and control <i>I</i><sub>OFF</sub>. By optimizing various parameters related to the N<sup>+</sup>-pocket and the gate electrodes, DGNP-EHBTFET’s <i>I</i><sub>OFF</sub> is reduced by at least four orders of magnitude, it has a 75.1% decreased average subthreshold swing compared with other EHBTFETs, and it can maintain a high ON-state current. This design greatly promotes the application potential of EHBTFETs. |
| first_indexed | 2024-03-09T21:29:16Z |
| format | Article |
| id | doaj.art-25eef8b98ccb4ba2bada99ba416bc7e6 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T21:29:16Z |
| publishDate | 2022-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-25eef8b98ccb4ba2bada99ba416bc7e62023-11-23T20:59:03ZengMDPI AGMaterials1996-19442022-10-011519692410.3390/ma15196924OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-PocketHu Liu0Wenting Zhang1Zaixing Wang2Yao Li3Huawei Zhang4School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, ChinaSchool of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, ChinaSchool of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, ChinaSchool of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, ChinaSchool of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, ChinaIn this paper, an In<sub>0.53</sub>Ga<sub>0.47</sub>As electron–hole bilayer tunnel field-effect transistor (EHBTFET) with a dual-metal left-gate and an N<sup>+</sup>-pocket (DGNP-EHBTFET) is proposed and systematically studied by means of numerical simulation. Unlike traditional transverse EHBTFETs, the proposed DGNP-EHBTFET can improve device performance without sacrificing the chip density, and can simplify the manufacturing process. The introduction of the dual-metal left-gate and the N<sup>+</sup>-pocket can shift the point-tunneling junction and adjust the energy band and the electric field in it, aiming to substantially degrade the OFF-state current (<i>I</i><sub>OFF</sub>) and maintain good ON-state performance. Moreover, the line tunneling governed by the tunneling-gate and the right-gate can further regulate and control <i>I</i><sub>OFF</sub>. By optimizing various parameters related to the N<sup>+</sup>-pocket and the gate electrodes, DGNP-EHBTFET’s <i>I</i><sub>OFF</sub> is reduced by at least four orders of magnitude, it has a 75.1% decreased average subthreshold swing compared with other EHBTFETs, and it can maintain a high ON-state current. This design greatly promotes the application potential of EHBTFETs.https://www.mdpi.com/1996-1944/15/19/6924tunnel field-effect transistorOFF-state leakage suppressionelectron–hole bilayerline tunneling |
| spellingShingle | Hu Liu Wenting Zhang Zaixing Wang Yao Li Huawei Zhang OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket Materials tunnel field-effect transistor OFF-state leakage suppression electron–hole bilayer line tunneling |
| title | OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket |
| title_full | OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket |
| title_fullStr | OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket |
| title_full_unstemmed | OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket |
| title_short | OFF-State Leakage Suppression in Vertical Electron–Hole Bilayer TFET Using Dual-Metal Left-Gate and N<sup>+</sup>-Pocket |
| title_sort | off state leakage suppression in vertical electron hole bilayer tfet using dual metal left gate and n sup sup pocket |
| topic | tunnel field-effect transistor OFF-state leakage suppression electron–hole bilayer line tunneling |
| url | https://www.mdpi.com/1996-1944/15/19/6924 |
| work_keys_str_mv | AT huliu offstateleakagesuppressioninverticalelectronholebilayertfetusingdualmetalleftgateandnsupsuppocket AT wentingzhang offstateleakagesuppressioninverticalelectronholebilayertfetusingdualmetalleftgateandnsupsuppocket AT zaixingwang offstateleakagesuppressioninverticalelectronholebilayertfetusingdualmetalleftgateandnsupsuppocket AT yaoli offstateleakagesuppressioninverticalelectronholebilayertfetusingdualmetalleftgateandnsupsuppocket AT huaweizhang offstateleakagesuppressioninverticalelectronholebilayertfetusingdualmetalleftgateandnsupsuppocket |