Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
We report an investigation of the Schottky barrier height (SBH) of Ni/n-type Ge and Ni/n-type GeSn films that is annealed at a wide range of temperatures. Both voltage- and temperature-dependent current–voltage (I–V) measurements are performed. From the analysis of these nonlinear I–V traces, the SB...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4997348 |