Effect of electrode and oxide properties on the filament kinetics during electroforming in metal-oxide-based memories
Abstract We developed a physical model to fundamentally understand the conductive filament (CF) formation and growth behavior in the switching layer during electroforming process in the metal-oxide-based resistive random-access memories (RRAM). The effects of the electrode and oxide layer properties...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-04-01
|
| Series: | npj Computational Materials |
| Online Access: | https://doi.org/10.1038/s41524-022-00770-2 |