Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness

Abstract Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting...

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Bibliographic Details
Main Authors: Ying Wang, Xinzhi Sheng, Qinglin Guo, Xiaoli Li, Shufang Wang, Guangsheng Fu, Yuriy I. Mazur, Yurii Maidaniuk, Morgan E. Ware, Gregory J. Salamo, Baolai Liang, Diana L. Huffaker
Format: Article
Language:English
Published: SpringerOpen 2017-03-01
Series:Nanoscale Research Letters
Subjects:
Photoluminescence
Quantum well
Interface
Nanostructures
Semiconductor
Online Access:http://link.springer.com/article/10.1186/s11671-017-1998-8

Internet

http://link.springer.com/article/10.1186/s11671-017-1998-8

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