Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors

Fast and direct identification of SARS‐CoV‐2 variants via 2D InSe field‐effect transistors

Abstract As the COVID‐19 pandemic evolves and new variants emerge, the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of SARS‐CoV‐2. Field‐effect transistors (FETs) with two‐dimensional (2D) materials are viable platforms for the detecti...

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Bibliographic Details
Main Authors: Duo Xu, Junji Li, Yunhai Xiong, Han Li, Jialin Yang, Wenqiang Liu, Lianfu Jiang, Kairui Qu, Tong Zhao, Xinyu Shi, Shengli Zhang, Dan Shan, Xiang Chen, Haibo Zeng
Format: Article
Language:English
Published: Wiley 2023-02-01
Series:InfoMat
Subjects:
2D InSe
field‐effect transistors
SARS‐CoV‐2
single‐nucleotide variations
trap states
Online Access:https://doi.org/10.1002/inf2.12398

Internet

https://doi.org/10.1002/inf2.12398

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