Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate by metalorganic chemical vapor deposition (MO...

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Bibliographic Details
Main Authors: Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng
Format: Article
Language:English
Published: Elsevier 2023-08-01
Series:Materials Today Advances
Subjects:
Direct irradiating X-ray photodetector (DXPD)
Zinc gallium oxide (ZnGa2O4)
Metalorganic chemical vapor deposition (MOCVD)
Gallium oxide (β- Ga2O3)
Sensitivity
Online Access:http://www.sciencedirect.com/science/article/pii/S2590049823000711

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http://www.sciencedirect.com/science/article/pii/S2590049823000711

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