A Pump-Gate Jot Device With High Conversion Gain for a Quanta Image Sensor
A new photodetector designed for Quanta image sensor application is proposed. The photodetector is a backside-illuminated, buried photodiode with a vertically integrated pump and transfer gate and a distal floating diffusion to reduce parasitic capacitance. The structure features compact layout and...
| मुख्य लेखकों: | , |
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| स्वरूप: | लेख |
| भाषा: | English |
| प्रकाशित: |
IEEE
2015-01-01
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| श्रृंखला: | IEEE Journal of the Electron Devices Society |
| विषय: | |
| ऑनलाइन पहुंच: | https://ieeexplore.ieee.org/document/7006672/ |