Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque

Abstract Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged as an effective solution to integrate AFMs into magnetic memories as active elements. In particular, spin‐orbit t...

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Bibliographic Details
Main Authors: Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao
Format: Article
Language:English
Published: Wiley-VCH 2024-06-01
Series:Advanced Electronic Materials
Subjects:
antiferromagnet
exchange bias
high‐performance memory
reconfigurable logic
spin‐orbit torque
spin‐transfer torque
Online Access:https://doi.org/10.1002/aelm.202300779

Internet

https://doi.org/10.1002/aelm.202300779

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