Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Abstract Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by a...

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Bibliographic Details
Main Authors: Yicheng Li, Zilian Qi, Yuxiao Lan, Kun Cao, Yanwei Wen, Jingming Zhang, Eryan Gu, Junzhou Long, Jin Yan, Bin Shan, Rong Chen
Format: Article
Language:English
Published: Nature Portfolio 2023-07-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-40249-2

Internet

https://doi.org/10.1038/s41467-023-40249-2

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