5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys

Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of th...

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Bibliographic Details
Main Authors: Jevgenij Pavlov, Tomas Ceponis, Kornelijus Pukas, Leonid Makarenko, Eugenijus Gaubas
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Materials
Subjects:
electron irradiation
<i>p</i>-type silicon and silicon–germanium alloy
DLTS
acceptor removal
Online Access:https://www.mdpi.com/1996-1944/15/5/1861

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https://www.mdpi.com/1996-1944/15/5/1861

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