5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys
Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of th...
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| author | Jevgenij Pavlov Tomas Ceponis Kornelijus Pukas Leonid Makarenko Eugenijus Gaubas |
| author_facet | Jevgenij Pavlov Tomas Ceponis Kornelijus Pukas Leonid Makarenko Eugenijus Gaubas |
| author_sort | Jevgenij Pavlov |
| collection | DOAJ |
| description | Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the <i>p</i>-type silicon doped with boron. In this work, minority carrier traps in <i>p</i>-type silicon (Si) and silicon–germanium (Si<sub>1−x</sub>Ge<sub>x</sub>) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in <i>p</i>-type silicon (Si) and silicon–germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron–oxygen (B<sub>i</sub>O<sub>i</sub>) and the vacancy–oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of Si<sub>1−x</sub>Ge<sub>x</sub> (with <i>x</i>= 0–0.05) materials. |
| first_indexed | 2024-03-09T20:31:48Z |
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| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T20:31:48Z |
| publishDate | 2022-03-01 |
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| spelling | doaj.art-26c707cd9ead4e6ca9d30d6f1f9b47b02023-11-23T23:20:01ZengMDPI AGMaterials1996-19442022-03-01155186110.3390/ma150518615.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> AlloysJevgenij Pavlov0Tomas Ceponis1Kornelijus Pukas2Leonid Makarenko3Eugenijus Gaubas4Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaDepartment of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk, BelarusInstitute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, LithuaniaMinority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the <i>p</i>-type silicon doped with boron. In this work, minority carrier traps in <i>p</i>-type silicon (Si) and silicon–germanium (Si<sub>1−x</sub>Ge<sub>x</sub>) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in <i>p</i>-type silicon (Si) and silicon–germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron–oxygen (B<sub>i</sub>O<sub>i</sub>) and the vacancy–oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of Si<sub>1−x</sub>Ge<sub>x</sub> (with <i>x</i>= 0–0.05) materials.https://www.mdpi.com/1996-1944/15/5/1861electron irradiation<i>p</i>-type silicon and silicon–germanium alloyDLTSacceptor removal |
| spellingShingle | Jevgenij Pavlov Tomas Ceponis Kornelijus Pukas Leonid Makarenko Eugenijus Gaubas 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys Materials electron irradiation <i>p</i>-type silicon and silicon–germanium alloy DLTS acceptor removal |
| title | 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys |
| title_full | 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys |
| title_fullStr | 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys |
| title_full_unstemmed | 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys |
| title_short | 5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in <i>p</i>-Type Si and Si<sub>1−x</sub>Ge<sub>x</sub> Alloys |
| title_sort | 5 5 mev electron irradiation induced transformation of minority carrier traps in i p i type si and si sub 1 x sub ge sub x sub alloys |
| topic | electron irradiation <i>p</i>-type silicon and silicon–germanium alloy DLTS acceptor removal |
| url | https://www.mdpi.com/1996-1944/15/5/1861 |
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