Field-free switching model of spin–orbit torque (SOT)-MTJ device with thermal effect based on voltage-controlled magnetic anisotropy (VCMA)
Electrically driven magnetization switch has attracted much attention in the new spintronic memory, especially for spin–orbit torque (SOT)-based magnetic random access memory (MRAM). However, the published models are facing limitations with the continuous shrinkage of the feature size down to nanosc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000426 |