The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. W...

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Bibliographic Details
Main Authors: Ya-Hsiang Tai, Yi-Cheng Yuan, Cheng-Che Tu, Pin-Chun Wang
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Amorphous silicon
gap-type
thin-film transistors (TFTs)
noise
Online Access:https://ieeexplore.ieee.org/document/9747923/

Internet

https://ieeexplore.ieee.org/document/9747923/

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