Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter

Low Switching Loss Built-In Diode of High-Voltage RC-IGBT with Shortened P+ Emitter

In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. It features a particular shortened P+ emitter (SE) in the diode part of RC-IGBT. Firstly, the shortened P+ emitt...

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Bibliographic Details
Main Authors: Wei Wu, Yansong Li, Mingkang Yu, Chongbing Gao, Yulu Shu, Yong Chen
Format: Article
Language:English
Published: MDPI AG 2023-04-01
Series:Micromachines
Subjects:
RC-IGBT
reverse recovery characteristics
IGBT characteristics
Online Access:https://www.mdpi.com/2072-666X/14/4/873

Internet

https://www.mdpi.com/2072-666X/14/4/873

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