Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells
In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO<sub>2</sub>) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the...
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2020-07-01
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author | Chia-Hsun Hsu Ka-Te Chen Pao-Hsun Huang Wan-Yu Wu Xiao-Ying Zhang Chen Wang Lu-Sheng Liang Peng Gao Yu Qiu Shui-Yang Lien Zhan-Bo Su Zi-Rong Chen Wen-Zhang Zhu |
author_facet | Chia-Hsun Hsu Ka-Te Chen Pao-Hsun Huang Wan-Yu Wu Xiao-Ying Zhang Chen Wang Lu-Sheng Liang Peng Gao Yu Qiu Shui-Yang Lien Zhan-Bo Su Zi-Rong Chen Wen-Zhang Zhu |
author_sort | Chia-Hsun Hsu |
collection | DOAJ |
description | In this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO<sub>2</sub>) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO<sub>2</sub> films. The experimental results show that the sALD TiO<sub>2</sub> has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO<sub>2</sub> films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO<sub>2</sub> films have a low absorption coefficient at the level of 10<sup>−3</sup> cm<sup>−1</sup> at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO<sub>2</sub> film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO<sub>2</sub> compact layer in perovskite solar cell applications. |
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spelling | doaj.art-26fe5b2090c74a78962abc098bfd50912023-11-20T05:53:40ZengMDPI AGNanomaterials2079-49912020-07-01107132210.3390/nano10071322Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar CellsChia-Hsun Hsu0Ka-Te Chen1Pao-Hsun Huang2Wan-Yu Wu3Xiao-Ying Zhang4Chen Wang5Lu-Sheng Liang6Peng Gao7Yu Qiu8Shui-Yang Lien9Zhan-Bo Su10Zi-Rong Chen11Wen-Zhang Zhu12School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Information Engineering, Jimei University, Xiamen 361021, ChinaDepartment of Materials Science and Engineering, Da-Yeh University, Changhua 51591, TaiwanSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaCAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, ChinaCAS Key Laboratory of Design a Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, ChinaKey Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaSchool of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, ChinaIn this study, spatial atomic layer deposition (sALD) is employed to prepare titanium dioxide (TiO<sub>2</sub>) thin films by using titanium tetraisopropoxide and water as metal and water precursors, respectively. The post-annealing temperature is varied to investigate its effect on the properties of the TiO<sub>2</sub> films. The experimental results show that the sALD TiO<sub>2</sub> has a similar deposition rate per cycle to other ALD processes using oxygen plasma or ozone oxidant, implying that the growth is limited by titanium tetraisopropoxide steric hindrance. The structure of the as-deposited sALD TiO<sub>2</sub> films is amorphous and changes to polycrystalline anatase at the annealing temperature of 450 °C. All the sALD TiO<sub>2</sub> films have a low absorption coefficient at the level of 10<sup>−3</sup> cm<sup>−1</sup> at wavelengths greater than 500 nm. The annealing temperatures of 550 °C are expected to have a high compactness, evaluated by the refractive index and x-ray photoelectron spectrometer measurements. Finally, the 550 °C-annealed sALD TiO<sub>2</sub> film with a thickness of ~8 nm is applied to perovskite solar cells as a compact electron transport layer. The significantly enhanced open-circuit voltage and conversion efficiency demonstrate the great potential of the sALD TiO<sub>2</sub> compact layer in perovskite solar cell applications.https://www.mdpi.com/2079-4991/10/7/1322spatial atomic layer depositiontitanium dioxideannealingelectron transport layerperovskite |
spellingShingle | Chia-Hsun Hsu Ka-Te Chen Pao-Hsun Huang Wan-Yu Wu Xiao-Ying Zhang Chen Wang Lu-Sheng Liang Peng Gao Yu Qiu Shui-Yang Lien Zhan-Bo Su Zi-Rong Chen Wen-Zhang Zhu Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells Nanomaterials spatial atomic layer deposition titanium dioxide annealing electron transport layer perovskite |
title | Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells |
title_full | Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells |
title_fullStr | Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells |
title_full_unstemmed | Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells |
title_short | Effect of Annealing Temperature on Spatial Atomic Layer Deposited Titanium Oxide and Its Application in Perovskite Solar Cells |
title_sort | effect of annealing temperature on spatial atomic layer deposited titanium oxide and its application in perovskite solar cells |
topic | spatial atomic layer deposition titanium dioxide annealing electron transport layer perovskite |
url | https://www.mdpi.com/2079-4991/10/7/1322 |
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