Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs
Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in s...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/7/987 |