Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs
Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in s...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/7/987 |
| _version_ | 1797445118733582336 |
|---|---|
| author | Dong-Hyun Wang Khwang-Sun Lee Jun-Young Park |
| author_facet | Dong-Hyun Wang Khwang-Sun Lee Jun-Young Park |
| author_sort | Dong-Hyun Wang |
| collection | DOAJ |
| description | Electro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in state-of-the-art field-effect transistors (FETs) such as nanosheet FETs (NS FETs) has not yet been demonstrated. This paper addresses the heat distribution characteristic of an NS FET considering the application of ETA, using 3D simulations. A vacuum inner spacer is newly proposed to improve annealing effects during ETA. In addition, evaluations of the device scaling and annealing effect were performed with respect to gate length, nanosheet-to-nanosheet vertical space, and inner spacer thickness. Guidelines for ETA in NS FETs can be provided on the basis of the results. |
| first_indexed | 2024-03-09T13:22:06Z |
| format | Article |
| id | doaj.art-271e5bfbdfa849ffab701fd22accf451 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T13:22:06Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-271e5bfbdfa849ffab701fd22accf4512023-11-30T21:28:33ZengMDPI AGMicromachines2072-666X2022-06-0113798710.3390/mi13070987Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETsDong-Hyun Wang0Khwang-Sun Lee1Jun-Young Park2School of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Cheongju 28644, KoreaSchool of Electronics Engineering, Chungbuk National University, Chungdae-ro 1, Cheongju 28644, KoreaElectro-thermal annealing (ETA) in a MOSFET utilizes Joule heating. The high-temperature heat effectively cures gate dielectric damages induced by electrical stresses or ionizing radiation. However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in state-of-the-art field-effect transistors (FETs) such as nanosheet FETs (NS FETs) has not yet been demonstrated. This paper addresses the heat distribution characteristic of an NS FET considering the application of ETA, using 3D simulations. A vacuum inner spacer is newly proposed to improve annealing effects during ETA. In addition, evaluations of the device scaling and annealing effect were performed with respect to gate length, nanosheet-to-nanosheet vertical space, and inner spacer thickness. Guidelines for ETA in NS FETs can be provided on the basis of the results.https://www.mdpi.com/2072-666X/13/7/987electro-thermal annealingnanosheet FETreliabilityvacuum inner spacer |
| spellingShingle | Dong-Hyun Wang Khwang-Sun Lee Jun-Young Park Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs Micromachines electro-thermal annealing nanosheet FET reliability vacuum inner spacer |
| title | Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs |
| title_full | Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs |
| title_fullStr | Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs |
| title_full_unstemmed | Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs |
| title_short | Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs |
| title_sort | vacuum inner spacer to improve annealing effect during electro thermal annealing of nanosheet fets |
| topic | electro-thermal annealing nanosheet FET reliability vacuum inner spacer |
| url | https://www.mdpi.com/2072-666X/13/7/987 |
| work_keys_str_mv | AT donghyunwang vacuuminnerspacertoimproveannealingeffectduringelectrothermalannealingofnanosheetfets AT khwangsunlee vacuuminnerspacertoimproveannealingeffectduringelectrothermalannealingofnanosheetfets AT junyoungpark vacuuminnerspacertoimproveannealingeffectduringelectrothermalannealingofnanosheetfets |