Atomic Layer Deposited SiO<sub>X</sub>-Based Resistive Switching Memory for Multi-Level Cell Storage
Herein, stable resistive switching characteristics are demonstrated in an atomic-layer-deposited SiO<sub>X</sub>-based resistive memory device. The thickness and chemical properties of the Pt/SiO<sub>X</sub>/TaN stack are verified by transmission electron microscopy (TEM) and...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Metals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2075-4701/12/8/1370 |