Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition

Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition

Abstract X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP inter...

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Bibliographic Details
Main Authors: Lifeng Yang, Tao Wang, Ying Zou, Hong-Liang Lu
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Band alignments
HfAlO dielectric
InP
Atomic layer deposition
Online Access:http://link.springer.com/article/10.1186/s11671-017-2104-y

Internet

http://link.springer.com/article/10.1186/s11671-017-2104-y

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