Radiation-Induced Nucleation and Growth of CaSi<sub>2</sub> Crystals, Both Directly during the Epitaxial CaF<sub>2</sub> Growth and after the CaF<sub>2</sub> Film Formation

Radiation-Induced Nucleation and Growth of CaSi<sub>2</sub> Crystals, Both Directly during the Epitaxial CaF<sub>2</sub> Growth and after the CaF<sub>2</sub> Film Formation

The radiation-induced phenomena of CaSi<sub>2</sub> crystal growth were investigated, both directly during the epitaxial CaF<sub>2</sub> growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness...

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Bibliographic Details
Main Authors: Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennadiy N. Kamaev, Vladimir A. Volodin, Zhanna V. Smagina
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Nanomaterials
Subjects:
crystal structure
nanostructures
electron irradiation
molecular-beam epitaxy
calcium compounds
semiconducting silicon
Online Access:https://www.mdpi.com/2079-4991/12/9/1407

Internet

https://www.mdpi.com/2079-4991/12/9/1407

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