Effects of different current confinement layers in GaN-based VCSELs

Effects of different current confinement layers in GaN-based VCSELs

For GaN-based vertical-cavity surface-emitting lasers (VCSELs), a suitable current confinement layer is essential for high-performance devices. The effect of different current confinement layers, including SiO2, AlN, and diamond, on the performance of GaN-based VCSELs was compared through simulation...

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Bibliographic Details
Main Authors: Yan-Hui Chen, Yang Mei, Zhong-Ming Zheng, Rong-Bin Xu, Ya-Chao Wang, Lei-Ying Ying, Zhi-Wei Zheng, Hao Long, Yi-Kun Bu, Bao-Ping Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2023-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0155159

Internet

http://dx.doi.org/10.1063/5.0155159

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