Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation

Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation

Mg-ion-implanted layers in a GaN substrate after annealing were investigated. Implanted Mg atoms precipitated along the edges of crystal defects were observed using 3D-APT. The breakdown characteristics of a GaN double-diffused vertical MISFET (DMISFET) fabricated via triple ion implantation are pre...

Full description

Bibliographic Details
Main Authors: Tohru Nakamura, Michitaka Yoshino, Toru Toyabe, Akira Yasuda
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
GaN
ion implantation
MISFET
Mg
Si
CAVET
Online Access:https://www.mdpi.com/2072-666X/15/1/147

Internet

https://www.mdpi.com/2072-666X/15/1/147

Similar Items