Analytical modeling electrical conduction in resistive-switching memory through current-limiting-friendly combination frameworks
Resistive-switching memory (RSM) is one of the most promising candidates for next-generation edge computing devices due to its excellent device performance. Currently, a number of experimental and modeling studies have been reported to understand the conduction behaviors. However, a complete physica...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0019266 |