A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory
Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resisti...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-12-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/16/1/182 |