A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

A Unified Current-Voltage Model for Metal Oxide-Based Resistive Random-Access Memory

Resistive random-access memory (RRAM) is essential for developing neuromorphic devices, and it is still a competitive candidate for future memory devices. In this paper, a unified model is proposed to describe the entire electrical characteristics of RRAM devices, which exhibit two different resisti...

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Bibliographic Details
Main Authors: Harry Chung, Hyungsoon Shin, Jisun Park, Wookyung Sun
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Materials
Subjects:
resistive random-access memory (RRAM)
resistive switching
memristor
memristive device
HSPICE
Online Access:https://www.mdpi.com/1996-1944/16/1/182

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