Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device
Abstract. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density. The tunneling probability was calculated by employing the Schroedinger equat...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
ITB Journal Publisher
2019-01-01
|
| Series: | Journal of Mathematical and Fundamental Sciences |
| Subjects: | |
| Online Access: | https://journals.itb.ac.id/index.php/jmfs/article/view/9232 |