Analysis of the Reformulated Source to Drain Tunneling Probability for Improving the Accuracy of a Multisubband Ensemble Monte Carlo Simulator
As an attempt to improve the description of the tunneling current that arises in ultrascaled nanoelectronic devices when charge carriers succeed in traversing the potential barrier between source and drain, an alternative and more accurate non-local formulation of the tunneling probability was sugge...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-03-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/4/533 |