Structural Properties of Silicon Doped Rare Earth Elements Ytterbium
This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectr...
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| Language: | English |
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V.N. Karazin Kharkiv National University Publishing
2024-03-01
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| Series: | East European Journal of Physics |
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| Online Access: | https://periodicals.karazin.ua/eejp/article/view/23055 |
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| author | Khodjakbar S. Daliev Sharifa B. Utamuradova Jonibek J. Khamdamov Mansur B. Bekmuratov |
| author_facet | Khodjakbar S. Daliev Sharifa B. Utamuradova Jonibek J. Khamdamov Mansur B. Bekmuratov |
| author_sort | Khodjakbar S. Daliev |
| collection | DOAJ |
| description | This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. The results of the study confirm that doping silicon with ytterbium impurities leads to a decrease in the concentration of optically active oxygen by 30-40%, depending on the concentration of the introduced impurities. It was also found that an increase in the number of defects leads to a broadening of the amorphous zone. It is assumed that similar dependencies exist for the Si-Yb system; however, to the best of our knowledge, similar results have not been reported previously. It is noted that the relative intensity of the three Raman bands in Si-Yb systems in the LTIOS (The light and temperature induced ordered state) state changes, and the relative intensity of Si-Si decreases. This indicates that pendant bonds are mainly formed by the breaking of Si-Si bonds. It was also observed that the light intensity causing this condition is far from that required for laser or solid phase crystallization. Using the Raman spectroscopy method, a structural transformation was discovered, expressed in a densely packed array of nanocrystals with a size of less than 11 lattice parameters. Small clusters were under strong internal stress (up to 3 GPa), which probably prevents the cluster size from increasing beyond the critical value for irreversible crystallization. |
| first_indexed | 2024-03-07T14:32:42Z |
| format | Article |
| id | doaj.art-2832c671576b4d5da2a7514830ef34b0 |
| institution | Directory Open Access Journal |
| issn | 2312-4334 2312-4539 |
| language | English |
| last_indexed | 2024-03-07T14:32:42Z |
| publishDate | 2024-03-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj.art-2832c671576b4d5da2a7514830ef34b02024-03-05T22:41:09ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392024-03-01137537910.26565/2312-4334-2024-1-3723055Structural Properties of Silicon Doped Rare Earth Elements YtterbiumKhodjakbar S. Daliev0Sharifa B. Utamuradova1Jonibek J. Khamdamov2Mansur B. Bekmuratov3Branch of the Federal State Budgetary Educational Institution of Higher Education “National Research University MPEI”,, Tashkent, UzbekistanbInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanNukus State Pedagogical Institute named after Ajiniyaz, Nukus, UzbekistanThis paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were analyzed using FSM-2201 and SENTERRA II Bruker spectrometers. Registration and identification of both crystalline and amorphous phase components in the samples was carried out. The results of the study confirm that doping silicon with ytterbium impurities leads to a decrease in the concentration of optically active oxygen by 30-40%, depending on the concentration of the introduced impurities. It was also found that an increase in the number of defects leads to a broadening of the amorphous zone. It is assumed that similar dependencies exist for the Si-Yb system; however, to the best of our knowledge, similar results have not been reported previously. It is noted that the relative intensity of the three Raman bands in Si-Yb systems in the LTIOS (The light and temperature induced ordered state) state changes, and the relative intensity of Si-Si decreases. This indicates that pendant bonds are mainly formed by the breaking of Si-Si bonds. It was also observed that the light intensity causing this condition is far from that required for laser or solid phase crystallization. Using the Raman spectroscopy method, a structural transformation was discovered, expressed in a densely packed array of nanocrystals with a size of less than 11 lattice parameters. Small clusters were under strong internal stress (up to 3 GPa), which probably prevents the cluster size from increasing beyond the critical value for irreversible crystallization.https://periodicals.karazin.ua/eejp/article/view/23055siliconytterbiumrare earth elementsramandiffusionthermal coolanttemperature |
| spellingShingle | Khodjakbar S. Daliev Sharifa B. Utamuradova Jonibek J. Khamdamov Mansur B. Bekmuratov Structural Properties of Silicon Doped Rare Earth Elements Ytterbium East European Journal of Physics silicon ytterbium rare earth elements raman diffusion thermal coolant temperature |
| title | Structural Properties of Silicon Doped Rare Earth Elements Ytterbium |
| title_full | Structural Properties of Silicon Doped Rare Earth Elements Ytterbium |
| title_fullStr | Structural Properties of Silicon Doped Rare Earth Elements Ytterbium |
| title_full_unstemmed | Structural Properties of Silicon Doped Rare Earth Elements Ytterbium |
| title_short | Structural Properties of Silicon Doped Rare Earth Elements Ytterbium |
| title_sort | structural properties of silicon doped rare earth elements ytterbium |
| topic | silicon ytterbium rare earth elements raman diffusion thermal coolant temperature |
| url | https://periodicals.karazin.ua/eejp/article/view/23055 |
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