Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzin...

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Bibliographic Details
Main Authors: Yingxia Yu, Zhaojun Lin, Chongbiao Luan, Yuanjie Lv, Zhihong Feng, Ming Yang, Yutang Wang, Hong Chen
Format: Article
Language:English
Published: AIP Publishing LLC 2013-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4821547

Internet

http://dx.doi.org/10.1063/1.4821547

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