Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzin...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4821547 |
| _version_ | 1819043697688313856 |
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| author | Yingxia Yu Zhaojun Lin Chongbiao Luan Yuanjie Lv Zhihong Feng Ming Yang Yutang Wang Hong Chen |
| author_facet | Yingxia Yu Zhaojun Lin Chongbiao Luan Yuanjie Lv Zhihong Feng Ming Yang Yutang Wang Hong Chen |
| author_sort | Yingxia Yu |
| collection | DOAJ |
| description | Using the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG) sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher. |
| first_indexed | 2024-12-21T10:00:54Z |
| format | Article |
| id | doaj.art-2855ac7459564e71b291bb84f8fcdfb6 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T10:00:54Z |
| publishDate | 2013-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-2855ac7459564e71b291bb84f8fcdfb62022-12-21T19:07:57ZengAIP Publishing LLCAIP Advances2158-32262013-09-0139092115092115-910.1063/1.4821547017309ADVInfluence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistorsYingxia Yu0Zhaojun Lin1Chongbiao Luan2Yuanjie Lv3Zhihong Feng4Ming Yang5Yutang Wang6Hong Chen7School of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaScience and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, ChinaScience and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaBeijing National laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, ChinaUsing the Quasi-Two-Dimensional (quasi-2D) model, the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate length were simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG) sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher.http://dx.doi.org/10.1063/1.4821547 |
| spellingShingle | Yingxia Yu Zhaojun Lin Chongbiao Luan Yuanjie Lv Zhihong Feng Ming Yang Yutang Wang Hong Chen Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors AIP Advances |
| title | Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors |
| title_full | Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors |
| title_fullStr | Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors |
| title_full_unstemmed | Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors |
| title_short | Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors |
| title_sort | influence of the channel electric field distribution on the polarization coulomb field scattering in algan aln gan heterostructure field effect transistors |
| url | http://dx.doi.org/10.1063/1.4821547 |
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