Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor

An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device performance. The unintentional doping concentration and screw dislocat...

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Bibliographic Details
Main Authors: Volkan Esendag, Peng Feng, Chenqi Zhu, Rongzi Ni, Jie Bai, Tao Wang
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Materials
Subjects:
unintentional doping
dislocations
GaN
AlGaN
electrical characterisation
capacitance-voltage
Online Access:https://www.mdpi.com/1996-1944/15/17/6043

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https://www.mdpi.com/1996-1944/15/17/6043

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