A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature

A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature

The paper studies the high-temperature structure of a chaotic potential (CP) induced in heterojunctions of the group III nitrides by the electrostatic field of charged dislocations. The CP amplitude in the junction plane has been obtained taking into account the spatial dispersion of a dielectric re...

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Bibliographic Details
Main Authors: Filimonov Alexey, Bondarenko Vyacheslav, Kumar Ravi
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2022-06-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
chaotic potential
natural size effect
iii-nitride heterojunction
two-dimensional electron gas
Online Access:https://physmath.spbstu.ru/article/2022.56.02/

Internet

https://physmath.spbstu.ru/article/2022.56.02/

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