A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature

The paper studies the high-temperature structure of a chaotic potential (CP) induced in heterojunctions of the group III nitrides by the electrostatic field of charged dislocations. The CP amplitude in the junction plane has been obtained taking into account the spatial dispersion of a dielectric re...

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Main Authors: Filimonov Alexey, Bondarenko Vyacheslav, Kumar Ravi
Format: Article
Language:English
Published: Peter the Great St.Petersburg Polytechnic University 2022-06-01
Series:St. Petersburg Polytechnical University Journal: Physics and Mathematics
Subjects:
Online Access:https://physmath.spbstu.ru/article/2022.56.02/
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author Filimonov Alexey
Bondarenko Vyacheslav
Kumar Ravi
author_facet Filimonov Alexey
Bondarenko Vyacheslav
Kumar Ravi
author_sort Filimonov Alexey
collection DOAJ
description The paper studies the high-temperature structure of a chaotic potential (CP) induced in heterojunctions of the group III nitrides by the electrostatic field of charged dislocations. The CP amplitude in the junction plane has been obtained taking into account the spatial dispersion of a dielectric response of two-dimensional electron gas. The dependence of the CP properties on the parameters of the system was found. In particular, the magnitude of the CP amplitude exceeds that of the thermal energy, if the two-dimensional non-degenerate gas given in III-nitride heterojunctions and the dislocation densities being up to and over 1010 cm–2.
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spelling doaj.art-286dab666e6449dc84985c59fe0fcd272022-12-22T00:55:55ZengPeter the Great St.Petersburg Polytechnic UniversitySt. Petersburg Polytechnical University Journal: Physics and Mathematics2405-72232022-06-0115210.18721/JPM.1520220714726A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperatureFilimonov Alexey0https://orcid.org/0000-0002-2793-5717Bondarenko Vyacheslav1https://orcid.org/0000-0002-9357-3902Kumar Ravi2https://orcid.org/0000-0001-6856-6092Peter the Great St. Petersburg Polytechnic UniversityPeter the Great St. Petersburg Polytechnic UniversityIndian Institute of Technology-MadrasThe paper studies the high-temperature structure of a chaotic potential (CP) induced in heterojunctions of the group III nitrides by the electrostatic field of charged dislocations. The CP amplitude in the junction plane has been obtained taking into account the spatial dispersion of a dielectric response of two-dimensional electron gas. The dependence of the CP properties on the parameters of the system was found. In particular, the magnitude of the CP amplitude exceeds that of the thermal energy, if the two-dimensional non-degenerate gas given in III-nitride heterojunctions and the dislocation densities being up to and over 1010 cm–2.https://physmath.spbstu.ru/article/2022.56.02/chaotic potentialnatural size effectiii-nitride heterojunctiontwo-dimensional electron gas
spellingShingle Filimonov Alexey
Bondarenko Vyacheslav
Kumar Ravi
A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
St. Petersburg Polytechnical University Journal: Physics and Mathematics
chaotic potential
natural size effect
iii-nitride heterojunction
two-dimensional electron gas
title A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
title_full A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
title_fullStr A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
title_full_unstemmed A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
title_short A chaotic potential of charged dislocations in the III-nitride heterojunctions at high temperature
title_sort chaotic potential of charged dislocations in the iii nitride heterojunctions at high temperature
topic chaotic potential
natural size effect
iii-nitride heterojunction
two-dimensional electron gas
url https://physmath.spbstu.ru/article/2022.56.02/
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