Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect

Ultrasensitive Multilayer MoS2‐Based Photodetector with Permanently Grounded Gate Effect

Abstract 2D materials, specifically MoS2 semiconductors, have received tremendous attention for photo‐sensing applications due to their tunable bandgap and low noise levels. A unique photodetector using multilayer MoS2 as the semiconductor channel, in which the gate electrode of the device is perman...

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Bibliographic Details
Main Authors: Muhammad Naqi, Manasa Kaniselvan, Sooho Choo, Gyuchull Han, Sangjin Kang, Jeonghun Kim, Youngki Yoon, Sunkook Kim
Format: Article
Language:English
Published: Wiley-VCH 2020-04-01
Series:Advanced Electronic Materials
Subjects:
grounded‐gate effect
molybdenum disulfide
photodetectors
photodiodes
transition metal dichalcogenides
Online Access:https://doi.org/10.1002/aelm.201901256

Internet

https://doi.org/10.1002/aelm.201901256

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