Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing
Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS)...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-12-01
|
| Series: | Giant |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666542521000345 |
| _version_ | 1818677532839378944 |
|---|---|
| author | Tao Wen Bo Ni Yuchu Liu Wei Zhang Zi-Hao Guo Yi-Chien Lee Rong-Ming Ho Stephen Z.D. Cheng |
| author_facet | Tao Wen Bo Ni Yuchu Liu Wei Zhang Zi-Hao Guo Yi-Chien Lee Rong-Ming Ho Stephen Z.D. Cheng |
| author_sort | Tao Wen |
| collection | DOAJ |
| description | Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail (i.e., DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A follow-up thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several µm2). The solvent evaporation and thermal annealing process, together with the strong segregation strength (χN) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano-sized line grating fabrication. |
| first_indexed | 2024-12-17T09:00:52Z |
| format | Article |
| id | doaj.art-288fb3e4d4f04118b549e0b0ae0199b4 |
| institution | Directory Open Access Journal |
| issn | 2666-5425 |
| language | English |
| last_indexed | 2024-12-17T09:00:52Z |
| publishDate | 2021-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Giant |
| spelling | doaj.art-288fb3e4d4f04118b549e0b0ae0199b42022-12-21T21:55:42ZengElsevierGiant2666-54252021-12-018100078Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealingTao Wen0Bo Ni1Yuchu Liu2Wei Zhang3Zi-Hao Guo4Yi-Chien Lee5Rong-Ming Ho6Stephen Z.D. Cheng7South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, China 510640; Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou, China 510640South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, China 510640; Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou, China 510640South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, China 510640; Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou, China 510640Institute of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, China 510640; Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou, China 510640Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013Department of Chemical Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013South China Advanced Institute for Soft Matter Science and Technology, School of Molecular Science and Engineering, South China University of Technology, Guangzhou, China 510640; Institute of Polymer Science and Polymer Engineering, The University of Akron, Akron, Ohio 44325Utilizing the controlled self-assembling of a giant surfactant, a bottom-up method for constructing line gratings with sub-10 nm resolution has been developed. Via a simple solvent vapor annealing procedure, the giant surfactant comprised of an oligomeric silsesquioxane (DPOSS) and polystyrene (PS) tail (i.e., DPOSS-PS) has been precisely self-assembled into perpendicularly oriented lamellae structures. A follow-up thermal annealing further significantly promotes the long-range ordering, giving rise to highly oriented and defect-free sub-10 nm line patterns (up to areas of several µm2). The solvent evaporation and thermal annealing process, together with the strong segregation strength (χN) of DPOSS-PS, play crucial roles in the self-orientation and width-reduction of the line patterns. This simple processing of the easy-accessed giant surfactants results in a facile and more economic approach for large-scale nano-sized line grating fabrication.http://www.sciencedirect.com/science/article/pii/S2666542521000345Giant surfactantSelf-assemblyNano-patterningThin film |
| spellingShingle | Tao Wen Bo Ni Yuchu Liu Wei Zhang Zi-Hao Guo Yi-Chien Lee Rong-Ming Ho Stephen Z.D. Cheng Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing Giant Giant surfactant Self-assembly Nano-patterning Thin film |
| title | Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing |
| title_full | Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing |
| title_fullStr | Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing |
| title_full_unstemmed | Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing |
| title_short | Towards achieving a large-area and defect-free nano-line pattern via controlled self-assembly by sequential annealing |
| title_sort | towards achieving a large area and defect free nano line pattern via controlled self assembly by sequential annealing |
| topic | Giant surfactant Self-assembly Nano-patterning Thin film |
| url | http://www.sciencedirect.com/science/article/pii/S2666542521000345 |
| work_keys_str_mv | AT taowen towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT boni towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT yuchuliu towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT weizhang towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT zihaoguo towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT yichienlee towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT rongmingho towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing AT stephenzdcheng towardsachievingalargeareaanddefectfreenanolinepatternviacontrolledselfassemblybysequentialannealing |