Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N/AlGaN/n<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N polar...

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Bibliographic Details
Main Authors: Yong Wang, Zihui Zhang, Long Guo, Yuxuan Chen, Yahui Li, Zhanbin Qi, Jianwei Ben, Xiaojuan Sun, Dabing Li
Format: Article
Language:English
Published: MDPI AG 2021-12-01
Series:Nanomaterials
Subjects:
light emitting diodes
tunnel junction
polarization
AlGaN
Online Access:https://www.mdpi.com/2079-4991/11/12/3328

Internet

https://www.mdpi.com/2079-4991/11/12/3328

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