Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Electronics and Telecommunications Research Institute (ETRI)
2023-02-01
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| Series: | ETRI Journal |
| Subjects: | |
| Online Access: | https://doi.org/10.4218/etrij.2021-0370 |