Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs...
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| 格式: | 文件 |
| 语言: | English |
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MDPI AG
2021-01-01
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| 丛编: | Micromachines |
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| 在线阅读: | https://www.mdpi.com/2072-666X/12/1/65 |