Optimization of the 3D multi-level SOT-MRAMs
With the development of electronic technology, semiconductor memory is gradually shifting toward smaller area with less power consumption. SOT-MRAM is one of the competitive substitutes for DRAM and SRAM due to its superior endurance and switching speed. In contrast to STT-MRAM, the separation of re...
| Κύριοι συγγραφείς: | , |
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| Μορφή: | Άρθρο |
| Γλώσσα: | English |
| Έκδοση: |
AIP Publishing LLC
2024-02-01
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| Σειρά: | AIP Advances |
| Διαθέσιμο Online: | http://dx.doi.org/10.1063/9.0000708 |