Mechanism for self-compensation in heavily carbon doped GaN
Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrati...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0133421 |