Mechanism for self-compensation in heavily carbon doped GaN
Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrati...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2023-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0133421 |
| _version_ | 1797771887072247808 |
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| author | Zhaohua Shen Xuelin Yang Shan Wu Huayang Huang Xiaolan Yan Ning Tang Fujun Xu Xinqiang Wang Weikun Ge Bing Huang Bo Shen |
| author_facet | Zhaohua Shen Xuelin Yang Shan Wu Huayang Huang Xiaolan Yan Ning Tang Fujun Xu Xinqiang Wang Weikun Ge Bing Huang Bo Shen |
| author_sort | Zhaohua Shen |
| collection | DOAJ |
| description | Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN. |
| first_indexed | 2024-03-12T21:44:05Z |
| format | Article |
| id | doaj.art-29470361e11143e79e679c14aa7b4233 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-03-12T21:44:05Z |
| publishDate | 2023-03-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-29470361e11143e79e679c14aa7b42332023-07-26T14:03:57ZengAIP Publishing LLCAIP Advances2158-32262023-03-01133035026035026-510.1063/5.0133421Mechanism for self-compensation in heavily carbon doped GaNZhaohua Shen0Xuelin Yang1Shan Wu2Huayang Huang3Xiaolan Yan4Ning Tang5Fujun Xu6Xinqiang Wang7Weikun Ge8Bing Huang9Bo Shen10State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaBeijing Computational Science Research Center, Beijing 100193, Jiangsu, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaBeijing Computational Science Research Center, Beijing 100193, Jiangsu, People’s Republic of ChinaState Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, People’s Republic of ChinaHeavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrations of C defects with different atomic configurations are calculated by taking the configurational entropy into account. The result shows that the concentrations of tri-carbon complexes (CNCiCN, where Ci refers to interstitial carbon) and dicarbon complexes (CNCGa) cannot be neglected under heavy doping conditions. The concentration of CNCiCN can even exceed that of CN at sufficiently high doping levels. Especially, we suggest that it is the tri-carbon complex CNCiCN, instead of the commonly expected CGa, that acts as the self-compensation centers in semi-insulating GaN under heavy C doping conditions. The results provide a fresh look on the long-standing problem about the self-compensation mechanisms in C doped GaN.http://dx.doi.org/10.1063/5.0133421 |
| spellingShingle | Zhaohua Shen Xuelin Yang Shan Wu Huayang Huang Xiaolan Yan Ning Tang Fujun Xu Xinqiang Wang Weikun Ge Bing Huang Bo Shen Mechanism for self-compensation in heavily carbon doped GaN AIP Advances |
| title | Mechanism for self-compensation in heavily carbon doped GaN |
| title_full | Mechanism for self-compensation in heavily carbon doped GaN |
| title_fullStr | Mechanism for self-compensation in heavily carbon doped GaN |
| title_full_unstemmed | Mechanism for self-compensation in heavily carbon doped GaN |
| title_short | Mechanism for self-compensation in heavily carbon doped GaN |
| title_sort | mechanism for self compensation in heavily carbon doped gan |
| url | http://dx.doi.org/10.1063/5.0133421 |
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