Mechanism for self-compensation in heavily carbon doped GaN

Mechanism for self-compensation in heavily carbon doped GaN

Heavy carbon (C) doping is of great significance for semi-insulating GaN in power electronics. However, the doping behaviors, especially the atomic configurations and related self-compensation mechanisms, are still under debate. Here, with the formation energy as the input parameter, the concentrati...

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Bibliographic Details
Main Authors:	Zhaohua Shen, Xuelin Yang, Shan Wu, Huayang Huang, Xiaolan Yan, Ning Tang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bing Huang, Bo Shen
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-03-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0133421

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