Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance t...

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Bibliographic Details
Main Authors: Ziheng Wang, Zehao Lin, Mengwei Si, Peide D. Ye
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-05-01
Series:Frontiers in Materials
Subjects:
indium oxide
oxide semiconductors
thin-film transistors
atomic layer deposition
interface and bulk traps
conductance method
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2022.850451/full

Internet

https://www.frontiersin.org/articles/10.3389/fmats.2022.850451/full

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