APA (7th ed.) Citation

Wang, Z., Lin, Z., Si, M., & Ye, P. D. (2022). Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method. Frontiers Media S.A.

Chicago Style (17th ed.) Citation

Wang, Ziheng, Zehao Lin, Mengwei Si, and Peide D. Ye. Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method. Frontiers Media S.A, 2022.

MLA (9th ed.) Citation

Wang, Ziheng, et al. Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method. Frontiers Media S.A, 2022.