Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET

Analysis of Circuit Simulation Considering Total Ionizing Dose Effects on FinFET and Nanowire FET

In this study, we analyzed the total ionizing dose (TID) effect characteristics of p-type FinFET and Nanowire FET (NW-FET) according to the structural aspect through comparison of the two devices. Similar to n-type devices, p-type NW-FETs are less affected than FinFETs by the TID effect. For the inv...

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Bibliographic Details
Main Authors: Hyeonjae Won, Myounggon Kang
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Applied Sciences
Subjects:
radiation
total ionizing dose (TID)
compact modeling
circuit simulation
Nanowire FET (NW-FET)
FinFET
Online Access:https://www.mdpi.com/2076-3417/11/3/894

Internet

https://www.mdpi.com/2076-3417/11/3/894

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