Gate reflectometry in dense quantum dot arrays

Gate reflectometry in dense quantum dot arrays

Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the need for better pulsed-gate and readout techniques. We perform gate-voltage pulsing and gate-based reflectometry measur...

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Bibliographic Details
Main Authors: Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele, Torbjørn Rasmussen, Bertram Brovang, Fabrizio Berritta, Amber Heskes, Jing Li, Louis Hutin, Benjamin Venitucci, Benoit Bertrand, Maud Vinet, Yann-Michel Niquet, Anasua Chatterjee, Ferdinand Kuemmeth
Format: Article
Language:English
Published: IOP Publishing 2023-01-01
Series:New Journal of Physics
Subjects:
spin qubits
reflectometry
quantum dots
Online Access:https://doi.org/10.1088/1367-2630/acc126

Internet

https://doi.org/10.1088/1367-2630/acc126

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