n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

Abstract The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with...

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Bibliographic Details
Main Authors: Arun Kumar, Aniello Pelella, Kimberly Intonti, Loredana Viscardi, Ofelia Durante, Filippo Giubileo, Paola Romano, Hazel Neill, Vilas Patil, Lida Ansari, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Format: Article
Language:English
Published: Wiley-VCH 2024-08-01
Series:Advanced Electronic Materials
Subjects:
2D materials
density functional theory
field effect transistor
GaSe
optoelectronic memory
photodetector
Online Access:https://doi.org/10.1002/aelm.202400010

Internet

https://doi.org/10.1002/aelm.202400010

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