Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology

In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for power amplifier output stages is extensively analyzed through an efficient simulation approach. The approach relies on a full circuit representation of the domains, which accounts for electrothermal effects t...

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Bibliographic Details
Main Authors: Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Lorenzo Codecasa, Peter J. Zampardi
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/10/6/757