Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test
Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/3/587 |