Investigation of the Crystallization Characteristics of Intermediate States in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

Investigation of the Crystallization Characteristics of Intermediate States in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films Induced by Nanosecond Multi-Pulsed Laser Irradiation

Laser pulses can be utilized to induce intermediate states of phase change materials between amorphous and crystalline phases, making phase change materials attractive and applicable for multi-level storage applications. In this paper, intermediate states of Ge<sub>2</sub>Sb<sub>2&...

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Bibliographic Details
Main Authors: Jia Du, Jun Zhou, Lianzhen Zhang, Na Yang, Xin Ding, Jin Zhang
Format: Article
Language:English
Published: MDPI AG 2022-02-01
Series:Nanomaterials
Subjects:
Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
laser-induced crystallization
multi-level intermediate states
Raman spectra
thermal simulations
Online Access:https://www.mdpi.com/2079-4991/12/3/536

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https://www.mdpi.com/2079-4991/12/3/536

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